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Ordering number:ENN6564
P-Channel Silicon MOSFET
5LP02N
Ultrahigh-Speed Switching Applications
Features
* Low ON-resistance. * Ultrahigh-speed switching. * 2.5V drive.
Package Dimensions
unit:mm 2178
[5LP02N]
5.0 4.0 4.0
0.45 0.5
0.6 2.0
5.0
0.45
0.44
1
2
3
14.0
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions
1.3
1.3
1 : Source 2 : Drain 3 : Gate SANYO : NP
Ratings -50 10 -0.14 -0.56 0.4 150 -55 to +150
Unit V V A A W C C
Electrical Characteristics at Ta = 25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=-1mA, VGS=0 VDS=-50V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=-100A VDS=-10V, ID=-70mA ID=-70mA, VGS=-4V ID=-40mA, VGS=-2.5V ID=-10mA, VGS=-1.5V -0.4 0.17 0.24 5.1 6 10 6.6 8.4 20 Conditions Ratings min -50 -10 10 -1.4 typ max Unit V A A V S
Marking : XE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000TS (KOTO) TA-2968 No.6564-1/4
5LP02N
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=-10V, ID=-140mA VDS=-10V, VGS=-10V, ID=-140mA VDS=-10V, VGS=-10V, ID=-140mA IS=-140mA, VGS=0 Conditions Ratings min typ 28 11 3.5 20 45 250 120 1.98 0.22 0.33 -0.83 -1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
0V --4V VIN VIN VDD= --25V ID= --70mA RL=357
PW=10s D.C.1%
D G
VOUT
5LP02N P.G 50
S
--0.14
ID -- VDS
--3 .0V
--0.30 --0.25 Drain Current, ID - A --0.20 --0.15 --0.10 --0.05
0
ID -- VGS
5C Ta= -2
--0.12
--2 .5V 0V
--4.0V --3.5V
V
Drain Current, ID - A
--0.10
--0.08
--0.06
--6. 0
--2 .
VGS= --1.5V
--0.04
--0.02 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
0
--0.5
Drain-to-Source Voltage, VDS - V
10 9
IT00287 10
--1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS - V IT00288
RDS(on) -- VGS
Ta=25C Static Drain-to-Source On-State Resistance, RDS (on) -
RDS(on) -- ID
VGS= --4V Ta=75C 25C --25C
Static Drain-to-Source On-State Resistance, RDS (on) -
ID= --70mA
8 7
7
5
--40mA
6 5 4 3 2 0
3
2
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
1.0 --0.01
2
3
5
7
75C
VDS= --10V
25C
--0.1
2
3
5 IT00290
Gate-to-Source Voltage, VGS - V
IT00289
Drain Current, ID - A
No.6564-2/4
5LP02N
100 7
RDS(on) -- ID
VGS= --2.5V
100 7
RDS(on) -- ID
VGS= --1.5V
Static Drain-to-Source On-State Resistance, RDS (on) -
3 2
Static Drain-to-Source On-State Resistance, RDS (on) -
5
5 3 2
10 7 5 3 2
25C Ta=75C --25C
Ta=75C
10 7 5 3 2
25C
--25C
1.0 --0.01
2
3
5
7
--0.1
2
3
5 IT00291
Drain Current, ID - A
12
1.0 --0.001
2
3
5
7
--0.01
2
3
5 IT00292
Drain Current, ID - A
1.0
RDS(on) -- Ta
Forward Transfer Admittance, | yfs | - S
yfs -- ID
7 5 3 2
VDS= --10V
Static Drain-to-Source On-State Resistance, RDS (on) -
10
8
6
2 = -V V GS --4.0 A, = m S --40 A, V G ID= --70m ID=
.5V
-Ta=
25C
75C
25C
0.1 7 5 3 2
4
2
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
0.01 --0.01
2
3
5
7
--0.1
2
3
5 IT00294
Ambient Temperature, Ta - C
5 3
IT00293 1000 7
Drain Current, ID - A
IF -- VSD
VGS=0
SW Time -- ID
VDD= --25V VGS= --4V td(off) tf
Forward Current, IF - A
2
Switching Time, SW Time - ns
5 3 2
--0.1 7 5 3 2
100 7 5 3 2 10 --0.01
tr
--0.01 0 --0.2 --0.4
Ta=75C 25C --25C
td(on)
--0.6
--0.8
--1.0
--1.2
--1.4
2
3
5
7
Diode Forward Voltage, VSD - V
100 7 5
IT00295 --10
Drain Current, ID - A
--0.1
2 IT00296
Ciss, Coss, Crss -- VDS
f=1MHz
VGS -- Qg
VDS= --10V ID= --140mA
--9
Gate-to-Source Voltage, VGS - V
--20 --25 IT00297
--8 --7 --6 --5 --4 --3 --2 --1 0
Ciss, Coss, Crss - pF
3 2
Ciss
10 7 5
Coss
Crss
3 2 1.0 0 --5 --10 --15
0
0.5
1.0
1.5
2.0 IT00298
Drain-to-Source Voltage, VDS - V
Total Gate Charge, Qg - nC
No.6564-3/4
5LP02N
0.5
PD -- Ta
Allowable Power Dissipation, PD - W
0.4
0.3
0.2
0.1
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta - C
IT01982
Note on usage : Since the 5LP02N is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice.
PS No.6564-4/4

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